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By Moumita Mukherjee

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Extra resources for Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems

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2. Shaped charge for plasma antenna design consideration The goal of shaped charge design [22] was to produce a metal jet capable of radiating electromagnetic energy effectively into free space. It was determined that the frequency range for operation would be around 1 GHz, thus a jet length of 75 mm (quarter wavelength) was required. The jet had to be capable of carrying current the entire distance required. Therefore, the shaped charge had to be designed so that the jet did net particulate or become non-coherent before it reached 75 mm in length.

Hysteresis cycle of reflectivity (at 1550 nm) vs. temperature for a 75-nm thick VO2 film made by PLD on C-type sapphire substrate showing the sharp phase transition of the VO2 material. 2 Electrically- induced SMT of VO2 thin films The proof of concept of thermally induced SMT of VO2 thin films for realising microwave (and optical) switching devices shown above represents already an innovative, interesting field of research both from theoretically and practical points of view. , 2004). We therefore initiated investigations for evaluating the electrically induced phase transition of VO2 thin films integrated in two-terminal switching devices.

For the Al body with speed about 6 km/sec it was shown [10] that the length of a plasma antenna can reach several tens meters. The principal scheme of such type of antenna is shown in the figure 15. 15. Principal scheme of shaped charge antenna: 1 – shaped charge, 2 – explosive chamber, 3 – tube, 4 – coil, 5 – plasma. 28 Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems 4. Future investigations It could be noted [26] detailed discussions of the shaped charge concept and an extensive list of sources (too numerous to list here) are available elsewhere.

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