Download CMOS RF Circuit Design for Reliability and Variability by Jiann-Shiun Yuan PDF

By Jiann-Shiun Yuan

The topic of this e-book is CMOS RF circuit layout for reliability. The equipment reliability and approach version concerns on RF transmitter and receiver circuits might be specific curiosity to the readers within the box of semiconductor units and circuits. This proposed ebook is exclusive to discover regular reliability matters within the gadget and expertise point after which to check their influence on RF instant transceiver circuit functionality. Analytical equations, experimental facts, gadget and circuit simulation effects may be given for transparent clarification. the most profit the reader derive from this ebook may be transparent realizing on how gadget reliability concerns impacts the RF circuit functionality subjected to operation getting older and approach variations.

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At high input power, the cascode transistor could suffer hot electron effect when gate-source voltage and drain-source voltage are high during switching transient (see Fig. 7). 5 Main Transistor Transistor Voltage (V) Fig. 6 Simulated gate-source and drain-source voltage of main transistor. 3 Time (ns) 5 Cascode Transistor Transistor Voltage (V) Fig. 7 Simulated gate-source and drain-source voltage of cascode transistor. 1 25 Mixed-Mode Device and Circuit Simulation To evaluate the physical insight of hot electron effect in the cascode PA, the Sentaurus TCAD software is used [10] and the class E amplifier stage of the cascode power amplifier in Fig.

To evaluate the physical insight of hot electron effect in RF operation, the mixed-mode simulation of Sentaurus TCAD software is used [9]. The mixed-mode device and circuit simulation allows one to evaluate the device physical insight under the oscillator large-signal operation condition. In Sentaurus simulation, physical equations such as Poisson’s and continuity equations for drift-diffusion transport are implemented. The Shockley-Read-Hall carrier recombination, Auger recombination, and impact ionization models are also used.

Clearly, the phase noise increases after hot electron stress for 5 h. A zoom-in plot from 1 to 10 kHz is displayed in Fig. 9 for better visualization of the phase noise difference between the fresh and stressed data. The increase in phase noise after hot electron effect could be related to decreased oscillator’s output amplitude and increased interface states which contribute flicker noise. For example, the 1/(Δf)3 dependence in the phase noise spectrum observed in Figs. 9 at low offset frequency is due to 1/f noise up-conversion to the carrier phase noise.

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